
Effective Carrier Lifetime in Ultrashort Pulse Laser Hyperdoped Silicon: Sulfur Concentration Dependence and Practical Limitations
Aufsatz

Keywords
effective carrier lifetime
hyperdoping
silicon
simulation
wet‐chemical etching
hyperdoping
silicon
simulation
wet‐chemical etching
DDC Classification
500 Naturwissenschaften
530 Physik
530 Physik
Published in
physica status solidi (a). Wiley-VCH; Weinheim. 221, 24, 2400132, 8 S.. ISSN: 1862-6300, eISSN: 1862-6319, DOI: 10.1002/pssa.202400132
Funding Project
/ Bundesministerium für Bildung und Forschung / 03INT701AA
/ Bundesministerium für Bildung und Forschung / 03FHP147A
/ Business Finland / 7479/31/2019
/ Academy of Finland / 354199
/ Academy of Finland / 331313
/ Bundesministerium für Bildung und Forschung / 03FHP147A
/ Business Finland / 7479/31/2019
/ Academy of Finland / 354199
/ Academy of Finland / 331313
Sponsorship
Gefördert im Rahmen des Projekt DEAL
Faculty
Institut für Mikrosystemtechnik (IMtech)
Link to publication
Collections
- Publikationen [213]
BibTeX
@article{Schäfer2024,
author={Schäfer, Sören and Liu, Xiaolong and Mc Kearney, Patrick and Paulus, Simon and Radfar, Behrad and Vähänissi, Ville and Savin, Hele and Kontermann, Stefan},
title={Effective Carrier Lifetime in Ultrashort Pulse Laser Hyperdoped Silicon: Sulfur Concentration Dependence and Practical Limitations},
journal={physica status solidi (a)},
volume={221},
number={24},
pages={8 S.},
month={05},
year={2024},
publisher={Wiley-VCH; Weinheim},
school={Hochschule RheinMain, Wiesbaden},
url={https://hlbrm.pur.hebis.de/xmlui/handle/123456789/322},
doi={10.25716/pur-212}
}