Investigation of the sulfur doping profile in femtosecond-laser processed silicon

Guenther, Kay-Michael; Gimpel, Thomas; Kontermann, Stefan; Schade, Wolfgang

Author

Guenther, Kay-Michael

Gimpel, Thomas

Kontermann, Stefan

Schade, Wolfgang

Date

2013-05-22

Version

Published Version

Metadata

Show full item record

Aufsatz

Keywords

Schottky diodes
P-N junctions
Capacitance voltage profiling
Electric measurements
Femtosecond lasers
Laser materials processing
Chemical elements
Secondary ion mass spectrometry
Semiconductor structures
Doping

DDC Classification

620 Ingenieurwissenschaften

Published in

Applied Physics Letters. AIP Publishing (2013). 102, 20, 202104, 4 S.. ISSN: 0003-6951, eISSN: 1077-3118, DOI: 10.1063/1.4807679

Faculty

Fachbereich Ingenieurwesen

Link to publication

https://hlbrm.pur.hebis.de/xmlui/handle/123456789/447
https://doi.org/10.1063/1.4807679

Collections

Publikationsnachweise [128]

BibTeX

@article{Guenther2013,
    author={Guenther, Kay-Michael and Gimpel, Thomas and Kontermann, Stefan and Schade, Wolfgang},
    title={Investigation of the sulfur doping profile in femtosecond-laser processed silicon},
    journal={Applied Physics Letters},
    volume={102},
    number={20},
    pages={4 S.},
    month={05},
    year={2013},
    publisher={AIP Publishing},
    school={Hochschule RheinMain, Wiesbaden},
    url={https://hlbrm.pur.hebis.de/xmlui/handle/123456789/447}
}