Investigation of the sulfur doping profile in femtosecond-laser processed silicon
Aufsatz
Schlagworte
Schottky diodes
P-N junctions
Capacitance voltage profiling
Electric measurements
Femtosecond lasers
Laser materials processing
Chemical elements
Secondary ion mass spectrometry
Semiconductor structures
Doping
P-N junctions
Capacitance voltage profiling
Electric measurements
Femtosecond lasers
Laser materials processing
Chemical elements
Secondary ion mass spectrometry
Semiconductor structures
Doping
DDC-Klassifikation
620 Ingenieurwissenschaften
Erschienen in
Applied Physics Letters. AIP Publishing (2013). 102, 20, 202104, 4 S.. ISSN: 0003-6951, eISSN: 1077-3118, DOI: 10.1063/1.4807679
Einrichtung
Fachbereich Ingenieurwesen
Link zur Veröffentlichung
Sammlungen
- Publikationsnachweise [126]
BibTeX
@article{Guenther2013,
author={Guenther, Kay-Michael and Gimpel, Thomas and Kontermann, Stefan and Schade, Wolfgang},
title={Investigation of the sulfur doping profile in femtosecond-laser processed silicon},
journal={Applied Physics Letters},
volume={102},
number={20},
pages={4 S.},
month={05},
year={2013},
publisher={AIP Publishing},
school={Hochschule RheinMain, Wiesbaden},
url={https://hlbrm.pur.hebis.de/xmlui/handle/123456789/447}
}
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