Electronic and structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions

Electronic transport
P-N junctions
Electrostatics
Electron beam induced current
Transmission electron microscopy
Femtosecond lasers
Transition metals
Chemical elements
Secondary ion mass spectrometry
Depth profiling techniques

DDC-Klassifikation

620 Ingenieurwissenschaften

Erschienen in

Applied Physics Letters. AIP Publishing (2013). 103, 6, 061904, 4 S.. DOI: 10.1063/1.4817726

Einrichtung

Fachbereich Ingenieurwesen

Link zur Veröffentlichung

https://hlbrm.pur.hebis.de/xmlui/handle/123456789/446
https://doi.org/10.1063/1.4817726

Sammlungen

Publikationsnachweise [126]

BibTeX

@article{Saring2013,
    author={Saring, Philipp and Baumann, Anna Lena and Schlieper-Ludewig, Bettina and Kontermann, Stefan and Schade, Wolfgang and Seibt, Michael},
    title={Electronic and structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions},
    journal={Applied Physics Letters},
    volume={103},
    number={6},
    pages={4 S.},
    month={08},
    year={2013},
    publisher={AIP Publishing},
    school={Hochschule RheinMain, Wiesbaden},
    url={https://hlbrm.pur.hebis.de/xmlui/handle/123456789/446}
}

Urheberrechtlich geschützt