Electronic and structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions

Electronic transport
P-N junctions
Electrostatics
Electron beam induced current
Transmission electron microscopy
Femtosecond lasers
Transition metals
Chemical elements
Secondary ion mass spectrometry
Depth profiling techniques

DDC Classification

620 Ingenieurwissenschaften

Published in

Applied Physics Letters. AIP Publishing (2013). 103, 6, 061904, 4 S.. DOI: 10.1063/1.4817726

Faculty

Fachbereich Ingenieurwesen

Link to publication

https://hlbrm.pur.hebis.de/xmlui/handle/123456789/446
https://doi.org/10.1063/1.4817726

Collections

Publikationsnachweise [128]

BibTeX

@article{Saring2013,
    author={Saring, Philipp and Baumann, Anna Lena and Schlieper-Ludewig, Bettina and Kontermann, Stefan and Schade, Wolfgang and Seibt, Michael},
    title={Electronic and structural properties of femtosecond laser sulfur hyperdoped silicon pn-junctions},
    journal={Applied Physics Letters},
    volume={103},
    number={6},
    pages={4 S.},
    month={08},
    year={2013},
    publisher={AIP Publishing},
    school={Hochschule RheinMain, Wiesbaden},
    url={https://hlbrm.pur.hebis.de/xmlui/handle/123456789/446}
}